Member Profile
Kang Wang
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Recognition (13)
Kang has been mentioned in the following items.
Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices
Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3 charge-storage layer exhibit memory functionality. The impact of the gate material’s work-function... More »
Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3…
Ultrafast spin transfer torque (STT) switching in an in-plane MgO magnetic tunnel junction with 50…
Topological insulators (TIs) are extraordinary materials that possess massless, Dirac-like topological…
Scanning tunneling spectroscopic studies of Bi2Se3 epitaxial films on Si (111) substrates reveal…
We propose an optoelectronic model to investigate polymer solar cells with plasmonic nanoparticles….
Exploring exciting and exotic physics, scientists are pursuing practical device applications for…
We report a direct observation of surface dominated conduction in an intrinsic Bi2Se3 thin film with…
The spin torque switching behavior of perpendicular magnetic tunnel junctions consisting of a CoFeB…
We have fabricated a metallic nanomesh using nanosphere lithography and metal evaporation. The metallic…
In a study published today in Nature Nanotechnology, researchers from UCLA’s Henry Samueli School…
As state of the art flash memory technologies scale down to sub 30 nm node, conventional floating…
Clean Green IGERT Newsletter Volume 3, December 21, 2011. Highlights from the Clean Energy for Green…
Clean Green IGERT (CGI) Newsletter Volume 1, August 19, 2010. Highlights from the first year of the…
