Achievement

Over the past four decades, reductions in transistor size have led to faster speeds, larger storage capacities, and lower power consumption in integrated circuits. Undesired size and density fluctuations will cause this approach to break down for next-generation memory devices. These variations will degrade parametric yield significantly, particularly in the sub-100-nm regime. IGERT Fellow Jonathan Shaw has developed devices that use redox molecules as storage nodes in metal oxide semiconductor field effect transistors (MOSFETs). The discrete energy levels of the molecules act as discrete electronic states. The uniformity in size and density of the molecules allows precise charging of a multi-bit-memory cell. Electrical measurements on the molecular memory device show charge storage behavior. Program/erase voltages and retention times were improved by changing the dielectric that encapsulates the molecule and by tuning the surface properties of the supporting oxide.